The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2011
Filed:
Sep. 22, 2008
Mikiya Ichimura, Nagoya, JP;
Katsuhiro Imai, Nagoya, JP;
Chikashi Ihara, Nagoya, JP;
Takatomo Sasaki, Suita, JP;
Yusuke Mori, Suita, JP;
Fumio Kawamura, Suita, JP;
Mikiya Ichimura, Nagoya, JP;
Katsuhiro Imai, Nagoya, JP;
Chikashi Ihara, Nagoya, JP;
Takatomo Sasaki, Suita, JP;
Yusuke Mori, Suita, JP;
Fumio Kawamura, Suita, JP;
NGK Insulators, Ltd., Nagoya, JP;
Osaka University, Suita, JP;
Abstract
A seed crystal is immersed in a melt containing a flux and a single crystal material in a growth vessel to produce a nitride single crystal on the seed crystal. A difference (TS-TB) of temperatures at a gas-liquid interface of the melt (TS) and at the lowermost part of the melt (TB) is set to 1° C. or larger and 8° C. or lower. Preferably, the substrate of seed crystal is vertically placed.