The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2011
Filed:
Nov. 13, 2009
Resistance-change random access memory device including memory cells connected to discharge elements
Hye-jin Kim, Seoul, KR;
Kwang-ho Kim, Hwaseong-si, KR;
Young-kug Moon, Suwon-si, KR;
Byung-gil Choi, Yongin-si, KR;
Hye-jin Kim, Seoul, KR;
Kwang-ho Kim, Hwaseong-si, KR;
Young-kug Moon, Suwon-si, KR;
Byung-gil Choi, Yongin-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A resistance-change random access memory device includes a resistance-change memory cell array having a plurality of resistance-change memory cells, where a plurality of word lines are connected to respective first terminals of the plurality of resistance-change memory cells. A plurality of bit lines are disposed perpendicular to the word lines and connected to respective second terminals of the plurality of resistance-change memory cells. The device also includes a plurality of discharge elements that are capable of connecting or disconnecting respective bit lines from a discharge voltage, where the discharge elements connect the respective bit lines to the discharge voltage before write and read operations.