The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2011
Filed:
Mar. 26, 2008
Yoshihiko Kanzawa, Osaka, JP;
Koji Katayama, Nara, JP;
Satoru Fujii, Osaka, JP;
Shunsaku Muraoka, Osaka, JP;
Koichi Osano, Osaka, JP;
Satoru Mitani, Osaka, JP;
Ryoko Miyanaga, Nara, JP;
Takeshi Takagi, Kyoto, JP;
Kazuhiko Shimakawa, Osaka, JP;
Yoshihiko Kanzawa, Osaka, JP;
Koji Katayama, Nara, JP;
Satoru Fujii, Osaka, JP;
Shunsaku Muraoka, Osaka, JP;
Koichi Osano, Osaka, JP;
Satoru Mitani, Osaka, JP;
Ryoko Miyanaga, Nara, JP;
Takeshi Takagi, Kyoto, JP;
Kazuhiko Shimakawa, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A nonvolatile memory element comprises a first electrode layer (), a second electrode (), and a resistance variable layer () which is disposed between the first electrode layer () and the second electrode layer (), a resistance value of the resistance variable layer varying reversibly according to electric signals having different polarities which are applied between the electrodes (), (), wherein the resistance variable layer () has a first region comprising a first oxygen-deficient tantalum oxide having a composition represented by TaOx (0<x<2.5) and a second region comprising a second oxygen-deficient tantalum oxide having a composition represented by TaOy (x<y<2.5), the first region and the second region being arranged in a thickness direction of the resistance variable layer.