The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2011
Filed:
Apr. 08, 2009
Xiang Gao, Edison, NJ (US);
Alex Ceruzzi, Princeton Junction, NJ (US);
Linlin Liu, Hillsborough, NJ (US);
Stephen Schwed, Bridgewater, NJ (US);
Xiang Gao, Edison, NJ (US);
Alex Ceruzzi, Princeton Junction, NJ (US);
Linlin Liu, Hillsborough, NJ (US);
Stephen Schwed, Bridgewater, NJ (US);
Emcore Corporation, Albuquerque, NM (US);
Abstract
A PIN photodiode having a substrate, a first type electrode layer disposed on the substrate, a first layer of intrinsic material disposed over a portion of the first-type electrode layer, and a first type window layer disposed over the intrinsic layer. An island shaped region of intrinsic material is disposed over the window layer and a dielectric layer is disposed over the island region and at least the peripheral portion of said island shaped region whereby an opening is formed in the island shaped region. A dopant is diffused through the opening so as to form a PN junction that extends into the first layer of intrinsic material.