The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2011
Filed:
Oct. 08, 2007
Chung-long Chang, Dou-Liu, TW;
David Ding-chung LU, Hsin-Chu, TW;
Chia-yi Chen, Hsin-Chu, TW;
I-lu Wu, Hsin-Chu, TW;
Chung-Long Chang, Dou-Liu, TW;
David Ding-Chung Lu, Hsin-Chu, TW;
Chia-Yi Chen, Hsin-Chu, TW;
I-Lu Wu, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor structure including a capacitor having increased capacitance and improved electrical performance is provided. The semiconductor structure includes a substrate; and a capacitor over the substrate. The capacitor includes a first layer including a first capacitor electrode and a second capacitor electrode, wherein the first capacitor electrode is formed of a metal-containing material and is free from polysilicon. The semiconductor structure further includes a MOS device including a gate dielectric over the substrate; and a metal-containing gate electrode on the gate dielectric, wherein the metal-containing gate electrode is formed of a same material, and has a same thickness, as the first capacitor electrode.