The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2011
Filed:
Apr. 02, 2010
Youngseok Kim, Gyeonggi-do, KR;
Jong-ho Yun, Gyeonggi-do, KR;
Kwang-jin Moon, Gyeonggi-do, KR;
Gil-heyun Choi, Gyeonggi-do, KR;
Jong-myeong Lee, Gyeonggi-do, KR;
Zung-sun Choi, Gyeonggi-do, KR;
Hye-kyung Jung, Gyeonggi-do, KR;
Youngseok Kim, Gyeonggi-do, KR;
Jong-ho Yun, Gyeonggi-do, KR;
Kwang-jin Moon, Gyeonggi-do, KR;
Gil-heyun Choi, Gyeonggi-do, KR;
Jong-myeong Lee, Gyeonggi-do, KR;
Zung-sun Choi, Gyeonggi-do, KR;
Hye-Kyung Jung, Gyeonggi-do, KR;
Abstract
Provided are methods of manufacturing semiconductor devices. The methods may include forming a first insulation layer on a semiconductor substrate, forming a groove by selectively etching the first insulation layer, filling the groove with a copper-based conductive layer, depositing a cobalt-based capping layer on the copper-based conductive layer by electroless plating, and cleansing the first insulation layer and the cobalt-based capping layer using a basic cleansing solution.