The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2011
Filed:
Dec. 09, 2009
Gordon M. Grivna, Mesa, AZ (US);
James Sellers, Chandler, AZ (US);
Prasad Venkatraman, Gilbert, AZ (US);
Gordon M. Grivna, Mesa, AZ (US);
James Sellers, Chandler, AZ (US);
Prasad Venkatraman, Gilbert, AZ (US);
Semiconductor Components Industries, LLC, Phoenix, AZ (US);
Abstract
In one embodiment, a method for forming a transistor having insulated gate electrodes and insulated shield electrodes within trench regions includes forming disposable dielectric stack overlying a substrate. The method also includes forming the trench regions adjacent to the disposable dielectric stack. After the insulated gate electrodes are formed, the method includes removing the disposable dielectric stack, and then forming spacers adjacent the insulated gate electrodes. The method further includes using the spacers to form recessed regions in the insulated gate electrodes and the substrate, and then forming enhancement regions in the first and second recessed regions.