The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2011
Filed:
Feb. 21, 2008
Wu-song Huang, Brewster, NY (US);
Ranee Wai-ling Kwong, Wappingers Falls, NY (US);
Pushkara R. Varanasi, Poughkeepsie, NY (US);
Wu-Song Huang, Brewster, NY (US);
Ranee Wai-Ling Kwong, Wappingers Falls, NY (US);
Pushkara R. Varanasi, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A structure and a photolithography method. The method includes forming a first layer of a first photoresist including a first polymer and a first photosensitive acid generator. A second layer of a second photoresist, including a second polymer having at least one phenyl or phenolic moiety, is formed directly onto the first layer. The second layer is patternwise imaged, resulting in exposing at least one first portion. The first portion is removed, revealing at least one first region of the first layer. A second portion of the second layer remains forming a structure having opaque regions. The structure and first region are exposed. The opaque regions shield from radiation at least one second region of the first layer, resulting in producing acid in the first region and in the structure. The structure and base-soluble regions of the first layer are removed. A structure is also described.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile