The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2011
Filed:
Oct. 06, 2010
Han-sung Chen, Hsinchu, TW;
Su-chueh Lo, Miaoli, TW;
Chun-hsiung Hung, Hsinchu, TW;
Nai-ping Kuo, Hsinchu, TW;
Ming-chih Hsieh, Hsinchu, TW;
Wen-pin Tsai, Taipai, TW;
Han-Sung Chen, Hsinchu, TW;
Su-Chueh Lo, Miaoli, TW;
Chun-Hsiung Hung, Hsinchu, TW;
Nai-Ping Kuo, Hsinchu, TW;
Ming-Chih Hsieh, Hsinchu, TW;
Wen-Pin Tsai, Taipai, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
According to an embodiment of the present invention, a method for detecting word line leakage in a memory device includes coupling a first word line in the memory device to a voltage source while coupling a second word line in the memory device to a ground level voltage. Next, the first word line is decoupled from the voltage source. The method also includes comparing a current of the first word line with a predetermined reference current for determining a leakage condition of the word line.