The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2011
Filed:
Mar. 11, 2008
Shui-hung Chen, Hsinchu, TW;
Jian-hsing Lee, Hsin-Chu, TW;
Yung-tien Tsai, Hsin-Chu, TW;
Anthony Oates, Hsinchu, TW;
Shui-Hung Chen, Hsinchu, TW;
Jian-Hsing Lee, Hsin-Chu, TW;
Yung-Tien Tsai, Hsin-Chu, TW;
Anthony Oates, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Electrostatic discharge (ESD) protection in high voltage semiconductor devices is disclosed that provides enhanced current isolation between transistor drains or sources by creating an isolation island surrounding the drains or sources. This isolation island can be a higher-doped region within which the drain/source lies. The junction between the higher doping of this island region and the surrounding substrates operates to limit the amount of current that passes through the drain/source. Additionally, oxide features may be used to create an island surrounding the drain/source contact. Again, this isolating effect makes the amount of current passing through the device more uniform, which protects the device from damage due to an ESD event.