The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2011
Filed:
Dec. 27, 2007
Kee-jeung Lee, Ichon-shi, KR;
Jae-sung Roh, Ichon-shi, KR;
Seung-jin Yeom, Ichon-shi, KR;
Han-sang Song, Ichon-shi, KR;
Deok-sin Kil, Ichon-shi, KR;
Young-dae Kim, Ichon-shi, KR;
Jin-hyock Kim, Ichon-shi, KR;
Kwan-woo DO, Ichon-shi, KR;
Kee-Jeung Lee, Ichon-shi, KR;
Jae-Sung Roh, Ichon-shi, KR;
Seung-Jin Yeom, Ichon-shi, KR;
Han-Sang Song, Ichon-shi, KR;
Deok-Sin Kil, Ichon-shi, KR;
Young-Dae Kim, Ichon-shi, KR;
Jin-Hyock Kim, Ichon-shi, KR;
Kwan-Woo Do, Ichon-shi, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
A method for fabricating a capacitor includes forming a sacrificial layer having a plurality of trenches on an upper portion of a substrate, forming storage nodes in the trenches, exposing upper portions of the storage nodes by removing a portion of the sacrificial layer, forming supporters to support the exposed upper portions of the storage nodes, removing the sacrificial layer under the supporters, and removing the supporters.