The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2011
Filed:
Jun. 23, 2010
Applicants:
Kevin L. Beaman, Boise, ID (US);
John T. Moore, Boise, ID (US);
Inventors:
Kevin L. Beaman, Boise, ID (US);
John T. Moore, Boise, ID (US);
Assignee:
Round Rock Research, LLC, Mt. Kisco, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
Abstract
The invention includes a method of forming a structure over a semiconductor substrate. A silicon dioxide containing layer is formed across at least some of the substrate. Nitrogen is formed within the silicon dioxide containing layer. Substantially all of the nitrogen within the silicon dioxide is at least 10 Å above the substrate. After the nitrogen is formed within the silicon dioxide layer, conductively doped silicon is formed on the silicon dioxide layer.