The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2011

Filed:

Dec. 21, 2007
Applicants:

Thomas Zilbauer, Munich, DE;

Ignaz Eisele, Icking, DE;

Jan Matusche, Dresden, DE;

Ursula Ingeborg Schmidt, Dresden, DE;

Inventors:

Thomas Zilbauer, Munich, DE;

Ignaz Eisele, Icking, DE;

Jan Matusche, Dresden, DE;

Ursula Ingeborg Schmidt, Dresden, DE;

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/06 (2006.01); C23C 16/14 (2006.01); C23C 16/18 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01); C23C 16/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method and apparatus for performing ALD deposition of hafnium oxide on a substrate is provided. The apparatus includes a process chamber, a precursor delivery subsystem, an oxidizer delivery subsystem, a purge gas subsystem, a solvent flush subsystem, and optional solvent recovery and purification subsystems. The method includes pulsing precursor compounds into the process chamber in sequence. While one precursor is pulsed, purge gas is provided through the other precursor line. After pulsing, precursor lines are purged, and the chamber is evacuated and purged. A solvent flush step is employed to remove precursor deposits that build up in piping over time.


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