The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2011
Filed:
Nov. 09, 2009
I-chen Yang, Hsinchu, TW;
Yao-wen Chang, Hsinchu, TW;
Tao-cheng LU, Hsinchu, TW;
Guan-wei Wu, Hsinchu, TW;
Tao-yuan Lin, Hsinchu, TW;
Po-chou Chen, Hsinchu, TW;
I-Chen Yang, Hsinchu, TW;
Yao-Wen Chang, Hsinchu, TW;
Tao-Cheng Lu, Hsinchu, TW;
Guan-Wei Wu, Hsinchu, TW;
Tao-Yuan Lin, Hsinchu, TW;
Po-Chou Chen, Hsinchu, TW;
MACRONIX International Co., Ltd., Hsinchu, TW;
Abstract
The memory device is described, which includes a substrate, a conductive layer, a plurality of charge storage layers and a plurality of doped regions. The substrate has a plurality of trenches formed therein. The conductive layer is disposed on the substrate and fills the trenches. The charge storage layers are disposed between the substrate and the conductive layer in the trenches respectively, wherein the charge storage layers are separated from each other. The doped regions are configured in the substrate under bottoms of the trenches, respectively.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile