The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2011
Filed:
Nov. 10, 2005
Kyoji Yamashita, Kyoto, JP;
Katsuhiro Otani, Nara, JP;
Katsuya Arai, Kyoto, JP;
Daisaku Ikoma, Osaka, JP;
Kyoji Yamashita, Kyoto, JP;
Katsuhiro Otani, Nara, JP;
Katsuya Arai, Kyoto, JP;
Daisaku Ikoma, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
Gate electrodesA throughF are formed to have the same geometry, and protruding parts of the gate electrodesA throughF extend across an isolation region onto impurity diffusion regions. The gate electrodeB and P-type impurity diffusion regionsBare connected through a shared contactAto a first-level interconnect MH, and the gate electrodeE and N-type impurity diffusion regionsAare connected through a shared contactAto a first-level interconnect MI. In this way, contact pad parts of the gate electrodesA throughF can be located apart from active regions of a substrate for MOS transistors. This suppresses the influence of the increased gate length due to hammerhead and gate flaring. As a result, transistors TrA through TrF can have substantially the same finished gate length.