The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2011
Filed:
Jul. 10, 2008
Norman Shaowen Chen, Poughkeepsie, NY (US);
Scott Goad, Pflugerville, TX (US);
Paul Willard Ackmann, Lakeway, TX (US);
Norman Shaowen Chen, Poughkeepsie, NY (US);
Scott Goad, Pflugerville, TX (US);
Paul Willard Ackmann, Lakeway, TX (US);
GLOBALFOUNDRIES, Inc., Grand Cayman, KY;
Abstract
An optical proximity correction (OPC) method for photolithography applications can be utilized to reduce the processing time, cost, and post-OPC file size associated with conventional methods. The OPC method provides a target layout pattern that represents a corresponding mask pattern for a photolithography mask, and aligns the target layout pattern relative to a suitably dimensioned fragmentation grid. Then, at least one feature of the target layout pattern is fragmented using the fragmentation grid. Thereafter, a fragment data set is generated in response to the grid-based fragmentation of the target layout pattern.