The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 30, 2011

Filed:

Dec. 30, 2008
Applicants:

Cheng-hsu Wu, Chu-Tung Town, TW;

David Yen, Chu-Bak, TW;

Tsai-hsin Lai, Jhubei, TW;

Inventors:

Cheng-Hsu Wu, Chu-Tung Town, TW;

David Yen, Chu-Bak, TW;

Tsai-Hsin Lai, Jhubei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/24 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory cell includes a write access transistor coupled between a storage node and a write bit line, and active during a write cycle responsive to a voltage on a write word line; a read access transistor coupled between a read word line and a read bit line, and active during a read cycle responsive to a voltage at the storage node; and a storage capacitor coupled between the read word line and the storage node. Methods for operating the memory cell are also disclosed.


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