The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2011
Filed:
Jul. 16, 2008
James W. Adkisson, Jericho, VT (US);
John J. Ellis-monaghan, Grand Isle, VT (US);
Rajendran Krishnasamy, Essex Junction, VT (US);
Solomon Mulugeta, Essex Junction, VT (US);
Charles F. Musante, South Burlington, VT (US);
Richard J. Rassel, Essex Junction, VT (US);
James W. Adkisson, Jericho, VT (US);
John J. Ellis-Monaghan, Grand Isle, VT (US);
Rajendran Krishnasamy, Essex Junction, VT (US);
Solomon Mulugeta, Essex Junction, VT (US);
Charles F. Musante, South Burlington, VT (US);
Richard J. Rassel, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A set of frame transfer transistors are provided between a hold gate transistor and a transfer gate transistor of a CMOS image sensor to enable storage of charge generate in the photosensitive diode after exposure. The readout of the charges from the set of frame transfer transistors may be performed after a plurality of exposures of the CMOS image sensor, between each of which charges are shifted toward the transfer gate transistor within the set of frame transfer transistors. Useful operation modes are enabled including a burst mode operation for rapid capture of successive images and high dynamic range operations in which multiple images are taken with different exposure times or a large capacitance is provided by ganging the diffusions of the set of frame transfer transistors.