The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2011
Filed:
Sep. 23, 2009
Tong Zhao, Fremont, CA (US);
Hui-chuan Wang, Pleasanton, CA (US);
Kunliang Zhang, Milpitas, CA (US);
Yu-hsia Chen, Mountain View, CA (US);
Min LI, Dublin, CA (US);
Tong Zhao, Fremont, CA (US);
Hui-Chuan Wang, Pleasanton, CA (US);
Kunliang Zhang, Milpitas, CA (US);
Yu-Hsia Chen, Mountain View, CA (US);
Min Li, Dublin, CA (US);
Headway Technologies, Inc., Milpitas, CA (US);
Abstract
A high performance TMR sensor is fabricated by employing a composite inner pinned (AP1) layer in an AP2/Ru/AP1 pinned layer configuration. In one embodiment, there is a 10 to 80 Angstrom thick lower CoFeB or CoFeB alloy layer on the Ru coupling layer, a and 5 to 50 Angstrom thick Fe or Fe alloy layer on the CoFeB or CoFeB alloy, and a 5 to 30 Angstrom thick Co or Co rich alloy layer formed on the Fe or Fe alloy. A MR ratio of about 48% with a RA of <2 ohm-umis achieved when a CoFe AP2 layer, MgO (NOX) tunnel barrier, and CoFe/NiFe free layer are used in the TMR stack. Improved RA uniformity and less head noise are observed. Optionally, a CoFe layer may be inserted between the coupling layer and CoFeB or CoFeB alloy layer to improve pinning strength and enhance crystallization.