The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2011
Filed:
Oct. 09, 2008
Robert Bruce Davies, Tempe, AZ (US);
Robert Bruce Davies, Tempe, AZ (US);
HVVi Semiconductors, Inc., Phoenix, AZ (US);
Abstract
A semiconductor device is formed having lower gate to drain capacitance. A trench () is formed adjacent to a drain () of the semiconductor device. Trench () has a sidewall surface () and a surface (). A doped region () is implanted through the sidewall surface () of trench (). A dielectric layer () overlies the sidewall surface () of trench (). A shield layer () overlies the dielectric layer (). The shield layer () is between a portion of drain () and a portion of the gate and gate interconnect of the semiconductor device thereby reducing gate to drain capacitance. The shield layer () overlies a minority portion of the surface () of trench (). A second shield layer () further reduces gate to drain capacitance.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile