The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2011
Filed:
Feb. 20, 2008
Applicants:
Shih Wei Wang, Hsin-Chu, TW;
Chun Jung Lin, Hsin-Chu, TW;
Inventors:
Shih Wei Wang, Hsin-Chu, TW;
Chun Jung Lin, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
Abstract
A multi-transistor element including a substrate, a first floating gate disposed on the substrate, a second floating gate disposed on the substrate and coupled to the first floating gate, and a first active region disposed in the substrate and coupled to the first and second floating gates.
Wang, Shih. (2011). Multi-transistor non-volatile memory element (U.S. Patent No. 8008702). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8008702
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile