The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2011
Filed:
Jan. 22, 2009
Yuuichi Kamimuta, Yokohama, JP;
Akira Nishiyama, Yokohama, JP;
Yasushi Nakasaki, Yokohama, JP;
Tsunehiro Ino, Fujisawa, JP;
Masato Koyama, Kanagawa-Ken, JP;
Yuuichi Kamimuta, Yokohama, JP;
Akira Nishiyama, Yokohama, JP;
Yasushi Nakasaki, Yokohama, JP;
Tsunehiro Ino, Fujisawa, JP;
Masato Koyama, Kanagawa-Ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
It is possible to prevent the deterioration of device characteristic as much as possible. A semiconductor device includes: a semiconductor substrate; a gate insulating film provided above the semiconductor substrate and containing a metal, oxygen and an additive element; a gate electrode provided above the gate insulating film; and source/drain regions provided in the semiconductor substrate on both sides of the gate electrode. The additive element is at least one element selected from elements of Group 5, 6, 15, and 16 at a concentration of 0.003 atomic % or more but 3 atomic % or less.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile