The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2011
Filed:
Jan. 12, 2007
Deok-kee Kim, Bedford Hills, NY (US);
Dureseti Chidambarrao, Weston, CT (US);
William K. Henson, Peekskill, NY (US);
Chandrasekharan Kothandaraman, Hopewell Junction, NY (US);
Deok-Kee Kim, Bedford Hills, NY (US);
Dureseti Chidambarrao, Weston, CT (US);
William K. Henson, Peekskill, NY (US);
Chandrasekharan Kothandaraman, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
An eFuse, includes: a substrate and an insulating layer disposed on the substrate; a first layer including a single crystal or polycrystalline silicon disposed on the insulating layer; a second layer including a single crystal or polycrystalline silicon germanium disposed on the first layer, and a third layer including a silicide disposed on the second layer. The Ge has a final concentration in a range of approximately five percent to approximately twenty-five percent.