The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2011
Filed:
Feb. 25, 2010
Applicant:
Naohisa Sengoku, Hyogo, JP;
Inventor:
Naohisa Sengoku, Hyogo, JP;
Assignee:
Panasonic Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device has a gate insulating film formed on a semiconductor substrate, a second gate electrode portion of a gate electrode including a TiN film and a polysilicon film that are successively formed on the gate insulating film, and an interlayer insulating film formed on the semiconductor substrate so as to cover the gate electrode. A contact formed to extend through the interlayer insulating film and the polysilicon film is directly connected to the TiN film.
Sengoku, Naohisa. (2011). Semiconductor device and method for fabricating the same (U.S. Patent No. 8004046). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8004046
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile