The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2011
Filed:
Jan. 04, 2007
Omar Zia, Austin, TX (US);
Ruiqi Tian, Austin, TX (US);
Edward O. Travis, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A method for making a semiconductor device is provided which comprises (a) creating a data set () which defines a set of tiles for a polysilicon deposition process; (b) deriving a polysilicon deposition mask set () from the data set, wherein the polysilicon deposition mask set includes a plurality of polysilicon tiles (); (c) deriving an epitaxial growth mask set () from the data set, wherein the epitaxial growth mask set includes a plurality of epitaxial tiles (); and (d) using the polysilicon deposition mask set and the epitaxial growth mask set to make a semiconductor device (); wherein the epitaxial growth mask set is derived from the data set by using at least a portion of the tile pattern defined in the data set for at least a portion of the tile pattern defined in the epitaxial deposition mask set.