The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2011
Filed:
Dec. 03, 2008
Hui Chen, South Jordan, UT (US);
Ihsiu Ho, Salt Lake City, UT (US);
Stacy W. Hall, West Jordan, UT (US);
Briant Harward, West Jordan, UT (US);
Hossein Paravi, Sandy, UT (US);
Hui Chen, South Jordan, UT (US);
Ihsiu Ho, Salt Lake City, UT (US);
Stacy W. Hall, West Jordan, UT (US);
Briant Harward, West Jordan, UT (US);
Hossein Paravi, Sandy, UT (US);
Fairchild Semiconductor Corporation, San Jose, CA (US);
Abstract
A method for forming a semiconductor structure includes the following steps. A hard mask layer is formed over a semiconductor region. The hard mask layer has inner portions that are thinner than its outer portions, and the inner portions define an exposed surface area of the semiconductor region. A portion of the semiconductor region is removed through the exposed surface area of the semiconductor region. The thinner portions of the hard mask layer are removed to expose surface areas of the semiconductor region underlying the thinner portions. An additional portion of the semiconductor region is removed through all exposed surface areas of the semiconductor region thereby forming a trench having an upper portion that is wider than its lower portion.