The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2011
Filed:
Jul. 15, 2009
Manoj Vellaikal, Sunnyvale, CA (US);
Kartik Santhanam, Fremont, CA (US);
Yen B. Ta, Cupertino, CA (US);
Martin A. Hilkene, Gilroy, CA (US);
Matthew D. Scotney-castle, Morgan Hill, CA (US);
Canfeng Lai, Fremont, CA (US);
Peter I. Porshnev, San Jose, CA (US);
Majeed A. Foad, Sunnyvale, CA (US);
Manoj Vellaikal, Sunnyvale, CA (US);
Kartik Santhanam, Fremont, CA (US);
Yen B. Ta, Cupertino, CA (US);
Martin A. Hilkene, Gilroy, CA (US);
Matthew D. Scotney-Castle, Morgan Hill, CA (US);
Canfeng Lai, Fremont, CA (US);
Peter I. Porshnev, San Jose, CA (US);
Majeed A. Foad, Sunnyvale, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
In a plasma immersion ion implantation process, the thickness of a pre-implant chamber seasoning layer is increased (to permit implantation of a succession of wafers without replacing the seasoning layer) without loss of wafer clamping electrostatic force due to increased seasoning layer thickness. This is accomplished by first plasma-discharging residual electrostatic charge from the thick seasoning layer. The number of wafers which can be processed using the same seasoning layer is further increased by fractionally supplementing the seasoning layer after each wafer is processed, which may be followed by a brief plasma discharging of the supplemented seasoning before processing the next wafer.