The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2011
Filed:
Feb. 11, 2008
Frank Wirbeleit, Dresden, DE;
Rolf Stephan, Dresden, DE;
Peter Javorka, Radeburg, DE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
According to an illustrative example, a method of forming a semiconductor structure comprises providing a semiconductor substrate comprising a first feature and a second feature. A material layer is formed over the first feature and the second feature. A mask is formed over the first feature. At least one etch process adapted to form a sidewall spacer structure adjacent the second feature from a portion of the material layer is performed. The mask protects a portion of the material layer over the first feature from being affected by the at least one etch process. An ion implantation process is performed. The mask remains over the first feature during the ion implantation process.