The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 2011

Filed:

Dec. 23, 2008
Applicants:

Daisuke Ebi, Kanagawa, JP;

Kentaro Nakamura, Kanagawa, JP;

Kengo Hayashi, Kanagawa, JP;

Yoshinobu Hiraishi, Kanagawa, JP;

Shigeo Morimoto, Kanagawa, JP;

Hiroshi Monden, Kanagawa, JP;

Inventors:

Daisuke Ebi, Kanagawa, JP;

Kentaro Nakamura, Kanagawa, JP;

Kengo Hayashi, Kanagawa, JP;

Yoshinobu Hiraishi, Kanagawa, JP;

Shigeo Morimoto, Kanagawa, JP;

Hiroshi Monden, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.


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