The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2011
Filed:
Nov. 13, 2009
Darlene Hamilton, Lacey, WA (US);
Rinn Cleavelin, Dallas, TX (US);
Darlene Hamilton, Lacey, WA (US);
Rinn Cleavelin, Dallas, TX (US);
Nantero, Inc., Woburn, MA (US);
Abstract
A method of resetting a resistive change memory element is disclosed. The method comprises performing a series of programming operations—for example, a programming pulse of a predetermined voltage level and pulse width—on a resistive change memory element in order to incrementally increase the resistance of the memory element above some predefined threshold. Prior to each programming operation, the resistive state of the memory element is measured and used to determine the parameters used in that programming operation. If this measured resistance value is above a first threshold value, the memory element is determined to already be in a reset state and no further programming operation is performed. If this measured resistance value is below a second threshold value, this second threshold value being less than the first threshold value, a first set of programming parameters are used within the programming operation. If this initial value is above the second threshold value but below the first threshold value, a second set of programming parameters are used within the programming operation.