The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2011
Filed:
Jul. 23, 2008
Regino Sandoval, Rochester Hills, MI (US);
Sergey A. Kostylev, Bloomfield Hills, MI (US);
Wolodymyr Czubatyj, Warren, MI (US);
Tyler Lowrey, San Jose, CA (US);
Regino Sandoval, Rochester Hills, MI (US);
Sergey A. Kostylev, Bloomfield Hills, MI (US);
Wolodymyr Czubatyj, Warren, MI (US);
Tyler Lowrey, San Jose, CA (US);
Ovonyx, Inc., Troy, MI (US);
Abstract
A method of programming a multi-layer chalcogenide electronic device. The device includes an active region in electrical communication with two terminals, where the active region includes two or more layers. The method includes providing an electrical signal between the two terminals, where the electrical signal alters an electrical characteristic of a layer remote from one of the terminals. In one embodiment, the layer remote from the terminal is a chalcogenide material and the electrical characteristic is resistance. In another embodiment, an electrical characteristic of the layer in contact with the terminal is also altered. The alteration of an electrical characteristic may be caused by a transformation of a chalcogenide material from one structural state to another structural state.