The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7999355 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 16, 2011

Filed:

Jun. 26, 2009
Applicants:

Scott Jeffrey Weigel, Allentown, PA (US);

Mark Leonard O'neill, Allentown, PA (US);

Bing Han, Lansdale, PA (US);

Hansong Cheng, Allentown, PA (US);

Manchao Xiao, San Diego, CA (US);

Chia-chien Lee, Chupei, TW;

Inventors:

Scott Jeffrey Weigel, Allentown, PA (US);

Mark Leonard O'Neill, Allentown, PA (US);

Bing Han, Lansdale, PA (US);

Hansong Cheng, Allentown, PA (US);

Manchao Xiao, San Diego, CA (US);

Chia-Chien Lee, Chupei, TW;

Assignee:

Air Products and Chemicals, Inc., Allentown, PA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention is a process for spin-on deposition of a silicon dioxide-containing film under oxidative conditions for gap-filling in high aspect ratio features for shallow trench isolation used in memory and logic circuit-containing semiconductor substrates, such as silicon wafers having one or more integrated circuit structures contained thereon, comprising the steps of:


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