The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 16, 2011

Filed:

Jun. 11, 2008
Applicants:

Toyosei Takahashi, Utsunomiya, JP;

Rie Takayama, Utsunomiya, JP;

Hirohisa Dejima, Utsunomiya, JP;

Junya Kusunoki, Utsunomiya, JP;

Inventors:

Toyosei Takahashi, Utsunomiya, JP;

Rie Takayama, Utsunomiya, JP;

Hirohisa Dejima, Utsunomiya, JP;

Junya Kusunoki, Utsunomiya, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

A resin composition of the present invention is used for forming a filling material which fills at least a through-hole of a semiconductor substrate, the through-hole extending through the semiconductor substrate in a thickness direction thereof and having a conductive portion therein. The resin composition is composed of: a resin having a radical-polymerizable double bond, a thermosetting resin and a resin which differs from the resin having the radical-polymerizable double bond and has an alkali-soluble group and a double bond; or a cyclic olefin resin. A filling material of the present invention is formed of a cured product of the above resin composition. An insulating layer of the present invention is formed of a cured product of the above resin composition. The insulating layer includes: a layer-shaped insulating portion provided on a surface opposite to a functional surface of the semiconductor substrate; and a filling portion integrally formed with the insulating portion and filling the through-hole. A semiconductor device of the present invention includes the above insulating layer.


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