The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2011
Filed:
Apr. 08, 2009
Jae-man Yoon, Hwaseong-si, KR;
Yong-chul OH, Suwon-si, KR;
Hui-jung Kim, Seoul, KR;
Hyun-woo Chung, Seoul, KR;
Hyun-gi Kim, Hwaseong-si, KR;
Kang-uk Kim, Seoul, KR;
Jae-Man Yoon, Hwaseong-si, KR;
Yong-Chul Oh, Suwon-si, KR;
Hui-Jung Kim, Seoul, KR;
Hyun-Woo Chung, Seoul, KR;
Hyun-Gi Kim, Hwaseong-si, KR;
Kang-Uk Kim, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
In a semiconductor device and associated methods, the semiconductor device includes a substrate, an insulation layer on the substrate, a conductive structure on the insulation layer, the conductive structure including at least one metal silicide film pattern, a semiconductor pattern on the conductive structure, the semiconductor pattern protruding upwardly from the conductive structure, a gate electrode at least partially enclosing the semiconductor pattern, the gate electrode being spaced apart from the conductive structure, a first impurity region at a lower portion of the semiconductor pattern, and a second impurity region at an upper portion of the semiconductor pattern.