The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2011
Filed:
Dec. 11, 2007
Applicants:
Wenxu Xianyu, Suwon-si, KR;
Jung-hyun Lee, Yongin-si, KR;
Hyung-jin Bae, Seoul, KR;
Young-soo Park, Yongin-si, KR;
Inventors:
Wenxu Xianyu, Suwon-si, KR;
Jung-hyun Lee, Yongin-si, KR;
Hyung-jin Bae, Seoul, KR;
Young-soo Park, Yongin-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/43 (2006.01); H01L 21/283 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device including polysilicon (poly-Si) and method of manufacturing the same are provided. The semiconductor device includes a TaNmaterial layer and a poly-Si layer formed on the TaNmaterial layer. The semiconductor device including poly-Si may be manufactured by forming a TaNmaterial layer and forming a poly-Si layer by depositing silicon formed on the TaNmaterial layer and annealing silicon.