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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7999250 B1

PDFFull Text
Date of Patent:
Aug. 16, 2011

Filed:

Feb. 27, 2009

Silicon-germanium-carbon semiconductor structure

Applicants:

Bishnu Prasanna Gogoi, Scottsdale, AZ (US);

Robert Bruce Davies, Tempe, AZ (US);

Inventors:

Bishnu Prasanna Gogoi, Scottsdale, AZ (US);

Robert Bruce Davies, Tempe, AZ (US);

Assignee:

HVVi Semiconductors, Inc., Phoenix, AZ (US);

Attorneys:

Cool Patent, P.C.

Kenneth J. Cool

Primary Examiner:

Ida M Soward

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 31/0328 (2006.01); H01L 31/0336 (2006.01); H01L 31/072 (2006.01); H01L 31/109 (2006.01); H01L 29/10 (2006.01); H01L 29/04 (2006.01); H01L 31/036 (2006.01); H01L 31/0376 (2006.01); H01L 31/20 (2006.01); H01L 29/12 (2006.01);
U.S. Cl.
CPC ...
Abstract

In accordance with one or more embodiments, a semiconductor structure includes a semiconductor substrate, a first semiconductor material over the semiconductor substrate, and a second semiconductor material over a portion the first semiconductor material, wherein the second semiconductor material comprises silicon-germanium-carbon (SiGeC) and wherein the first semiconductor material is a silicon epitaxial layer. The semiconductor structure further includes an active device, wherein a portion of the active device is formed in the second semiconductor material and a dielectric structure extending from the first surface of the first semiconductor material into the semiconductor substrate through the first semiconductor material.

Find Patent Forward Citations

Gogoi, Bishnu. (2011). Silicon-germanium-carbon semiconductor structure (U.S. Patent No. 7999250). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7999250

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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