The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2011
Filed:
Sep. 25, 2008
Qingyun Chen, Branford, CT (US);
Xuan Lin, Northford, CT (US);
Vincent Paneccasio, Jr., Madison, CT (US);
Richard Hurtubise, Clinton, CT (US);
Joseph A. Abys, Guilford, CT (US);
Qingyun Chen, Branford, CT (US);
Xuan Lin, Northford, CT (US);
Vincent Paneccasio, Jr., Madison, CT (US);
Richard Hurtubise, Clinton, CT (US);
Joseph A. Abys, Guilford, CT (US);
Enthone Inc., West Haven, CT (US);
Abstract
A method is disclosed for metallizing a substrate comprising an interconnect feature in the manufacture of a microelectronic device, wherein the interconnect feature comprises a bottom, a sidewall, and a top opening having a diameter, D. The method comprises the following steps: depositing a barrier layer on the bottom and the sidewall of the interconnect feature, the barrier layer comprising a metal selected from the group consisting of ruthenium, tungsten, tantalum, titanium, iridium, rhodium, and combinations thereof; contacting the substrate comprising the interconnect feature comprising the bottom and sidewall having the barrier layer thereon with an aqueous composition comprising a reducing agent and a surfactant; and depositing copper metal onto the bottom and the sidewall of the interconnect feature having the barrier layer thereon.