The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2011
Filed:
Apr. 19, 2007
Kenji Kasahara, Tsukuba, JP;
Shunpei Yamazaki, Setagaya, JP;
Kenji Kasahara, Tsukuba, JP;
Shunpei Yamazaki, Setagaya, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
To provide a semiconductor device in which a semiconductor film having a leveled main surface is used as an active layer. A semiconductor film () having the leveled main surface with an rms of less than 10 nm and a P-V value of less than 70 nm which each indicate a surface roughness is formed by crystallizing a silicon film () containing germanium in a concentration of several %, preferably 0.1 to 10 atoms % and irradiating the film with a laser light. In a case of performing a crystallization by use of a metal element for accelerating the crystallization. The semiconductor film high in an orientation rate of the crystal as well as in levelness is obtained.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile