The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2011
Filed:
Aug. 27, 2008
Richard J. Carter, Hopewell Junction, NY (US);
George J. Kluth, Hopewell Junction, NY (US);
Michael J. Hargrove, Clinton Corners, NY (US);
Richard J. Carter, Hopewell Junction, NY (US);
George J. Kluth, Hopewell Junction, NY (US);
Michael J. Hargrove, Clinton Corners, NY (US);
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
A method of manufacturing a semiconductor device is provided herein, where the width effect is reduced in the resulting semiconductor device. The method involves providing a substrate having semiconductor material, forming an isolation trench in the semiconductor material, and lining the isolation trench with a liner material that substantially inhibits formation of high-k material thereon. The lined trench is then filled with an insulating material. Thereafter, a layer of high-k gate material is formed over at least a portion of the insulating material and over at least a portion of the semiconductor material. The liner material divides the layer of high-k gate material, which prevents the migration of oxygen over the active region of the semiconductor material.