The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2011
Filed:
Nov. 16, 2006
Koki Yano, Sodegaura, JP;
Kazuyoshi Inoue, Sodegaura, JP;
Nobuo Tanaka, Sodegaura, JP;
Tokie Tanaka, Legal Representative, Sodegaura, JP;
Koki Yano, Sodegaura, JP;
Kazuyoshi Inoue, Sodegaura, JP;
Nobuo Tanaka, Sodegaura, JP;
Tokie Tanaka, legal representative, Sodegaura, JP;
Idemitsu Kosan Co., Ltd., Tokyo, JP;
Abstract
Disclosed is a semiconductor thin film which can be formed at a relatively low temperature even on a flexible resin substrate. Since the semiconductor thin film is stable to visible light and has high device characteristics such as transistor characteristics, in the case where the semiconductor thin film is used as a switching device for driving a display, even when overlapped with a pixel part, the luminance of a display panel does not deteriorate. Specifically, a transparent semiconductor thin filmis produced by forming an amorphous film containing zinc oxide and indium oxide and then oxidizing the film so that the resulting film has a carrier density of 10cmor less, a Hall mobility of 2 cm/V·sec or higher, and an energy band gap of 2.4 EV or more.