The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2011
Filed:
May. 22, 2009
Valery S. Kaper, Winchester, MA (US);
John P. Bettencourt, Danvers, MA (US);
Jeffrey R. Laroche, Lowell, MA (US);
Kamal Tabatabaie, Sharon, MA (US);
Valery S. Kaper, Winchester, MA (US);
John P. Bettencourt, Danvers, MA (US);
Jeffrey R. LaRoche, Lowell, MA (US);
Kamal Tabatabaie, Sharon, MA (US);
Raytheon Company, Waltham, MA (US);
Abstract
A semiconductor structure comprising: a substrate; a seed layer supported by the substrate; an elemental semiconductor layer disposed over a first portion of the seed layer; and a compound semiconductor layer disposed on a second portion of the seed layer. The first portion of the seed layer is electrically insulated from the second portion of the seed layer. A first semiconductor device is formed in the elemental semiconductor layer. A second semiconductor device is formed in the compound semiconductor layer. The second semiconductor device includes: a first electrode in contact with a first region of the compound semiconductor layer; a second electrode in contact with a second region of the compound semiconductor layer; and a third electrode. The third electrode controls carriers passing in a third region of the compound semiconductor layer disposed between the first region and the second region. A fourth electrode is in electrical contact with the second portion of the seed layer.