The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2011
Filed:
Nov. 05, 2007
Eugene T. Bullock, Tucson, AZ (US);
Eugene T. Bullock, Tucson, AZ (US);
Applied Materials Israel, Ltd., Rehovot, IL;
Abstract
A system for electrically testing a semiconductor wafer, the system including (a) at least one charged particle beam focus effecting component and (b) at least one detector adapted to collect charged particles scattered from the wafer; wherein the system is adapted to scan a first area of a sample by a de-focused charged particle beam so as to affect a charging of the first area, scan at least a portion of the first area by a focused charged particle beam and detect electrons scattered from the at least portion. The system scans the at least portion while the first area remains affected by the de-focused charged particle beam. A method for electrically testing a semiconductor wafer includes scanning a first area of a sample by a de-focused charged particle beam so as to affect a charging of the first area; and scanning at least a portion of the first area by a focused charged particle beam while detecting electrons scattered from the at least portion, the at least portion being scanned while the first area remains affected by charging introduced by the de-focused charged particle beam.