The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2011
Filed:
Jan. 26, 2007
Romain Wacquez, Grenoble, FR;
Philippe Coronel, Barraux, FR;
Damien Lenoble, Ixelles, FR;
Robin Cerutti, Tarrytown, NY (US);
Thomas Skotnicki, Crolles-Montfort, FR;
Romain Wacquez, Grenoble, FR;
Philippe Coronel, Barraux, FR;
Damien Lenoble, Ixelles, FR;
Robin Cerutti, Tarrytown, NY (US);
Thomas Skotnicki, Crolles-Montfort, FR;
STMicroelectronics (Crolles 2) SAS, Crolles Cedex, FR;
Abstract
A planar transistor device includes two independent gates (a first and second gates) along with a semiconductor channel lying between the gates. The semiconductor channel is formed of a first material. The channel includes opposed ends comprising dielectric zone with a channel region positioned between the gates. The dielectric zones comprises an oxide of the first material.