The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2011
Filed:
Jan. 27, 2005
Roberto Bez, Milan, IT;
Fabio Pellizzer, Follina, IT;
Marina Tosi, Trezzo Sull'Adda, IT;
Romina Zonca, Paullo, IT;
Roberto Bez, Milan, IT;
Fabio Pellizzer, Follina, IT;
Marina Tosi, Trezzo Sull'Adda, IT;
Romina Zonca, Paullo, IT;
Micron Technology, Inc., Boise, ID (US);
Abstract
A process forms a phase change memory cell using a resistive element and a memory region of a phase change material. The resistive element has a first thin portion having a first sublithographic dimension in a first direction; and the memory region has a second thin portion having a second sublithographic dimension in a second direction transverse to the first dimension. The first thin portion and the second thin portion are in direct electrical contact and define a contact area of sublithographic extension. The second thin portion is delimited laterally by oxide spacer portions surrounded by a mold layer which defines a lithographic opening. The spacer portions are formed after forming the lithographic opening, by a spacer formation technique.