The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 09, 2011

Filed:

Mar. 30, 2007
Applicants:

Koichiro Hayashida, Kanagawa, JP;

Kazuhiro Narahara, Kanagawa, JP;

Hirotaka Kato, Kanagawa, JP;

Inventors:

Koichiro Hayashida, Kanagawa, JP;

Kazuhiro Narahara, Kanagawa, JP;

Hirotaka Kato, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 21/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A role of a bottom face of a silicon wafer is identified in a manufacturing process of the silicon wafer. And preferable characteristic feature is also identified. In order to obtain the above characteristic feature, a process method to be implemented into the method of manufacturing a normal silicon wafer is provided. For example, the method comprises: a pre-cleaning process for cleaning the silicon wafer having top and bottom faces processed to a mirror finish; and a rapid thermal process or an epitaxial growth process, wherein the pre-cleaning process comprises a hydrofluoric acid (HF) process and a subsequent pure water (DIW) process.


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