The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2011
Filed:
Feb. 20, 2009
Honkai Tam, Redwood City, CA (US);
Sribalan Santhanam, Palo Alto, CA (US);
Jung-cheng Yeh, San Jose, CA (US);
Sanjay P. Zambare, Sunnyvale, CA (US);
Honkai Tam, Redwood City, CA (US);
Sribalan Santhanam, Palo Alto, CA (US);
Jung-Cheng Yeh, San Jose, CA (US);
Sanjay P. Zambare, Sunnyvale, CA (US);
Apple Inc., Cupertino, CA (US);
Abstract
A memory circuit may include a pair of cross-coupled inverters configured to store a bit of data and a first transistor coupled to a first node of the pair of cross-coupled inverters. A plurality of transistors that form the pair of inverters have a first nominal threshold voltage. The first transistor is coupled to a first bit line, and has a second nominal threshold voltage that is lower than the first nominal threshold voltage. The first transistor may be a write transistor and another write transistor having the second nominal threshold voltage is coupled to the other node of the pair of cross-coupled inverters. A register file may include a bit storage section that includes at least one pair of the cross-coupled inverters; a write transistor section and a read transistor section having the second nominal threshold voltage.