The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2011
Filed:
May. 31, 2007
Jianhong Zhu, Austin, TX (US);
Jinrong Zhou, Austin, TX (US);
David Wu, Austin, TX (US);
James F. Buller, Austin, TX (US);
Jianhong Zhu, Austin, TX (US);
Jinrong Zhou, Austin, TX (US);
David Wu, Austin, TX (US);
James F. Buller, Austin, TX (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
MOS structures with remote contacts and methods for fabricating such MOS structures are provided. In one embodiment, a method for fabricating an MOS structure comprises providing a semiconductor layer that is at least partially surrounded by an isolation region and that has an impurity-doped first portion. First and second MOS transistors are formed on and within the first portion. The transistors are substantially parallel and define a space therebetween. An insulating material is deposited overlying the first portion of the semiconductor layer and at least a portion of the isolation region. A contact is formed through the insulating material outside the space such that the contact is in electrical communication with the transistors.