The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2011
Filed:
Aug. 24, 2007
Jeffrey C. Munro, Santa Clara, CA (US);
Srinivas D. Nemani, Sunnyvale, CA (US);
Young S. Lee, San Jose, CA (US);
Marlon Menezes, Mountain View, CA (US);
Christopher Dennis Bencher, San Jose, CA (US);
Vijay Parihar, Fremont, CA (US);
Jeffrey C. Munro, Santa Clara, CA (US);
Srinivas D. Nemani, Sunnyvale, CA (US);
Young S. Lee, San Jose, CA (US);
Marlon Menezes, Mountain View, CA (US);
Christopher Dennis Bencher, San Jose, CA (US);
Vijay Parihar, Fremont, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods are disclosed for activating dopants in a doped semiconductor substrate. A carbon precursor is flowed into a substrate processing chamber within which the doped semiconductor substrate is disposed. A plasma is formed from the carbon precursor in the substrate processing chamber. A carbon film is deposited over the substrate with the plasma. A temperature of the substrate is maintained while depositing the carbon film less than 500° C. The deposited carbon film is exposed to electromagnetic radiation for a period less than 10 ms, and has an extinction coefficient greater than 0.3 at a wavelength comprised by the electromagnetic radiation.