The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2011

Filed:

Jul. 06, 2010
Applicants:

Toshiharu Furukawa, Essex Junction, VT (US);

Mark Charles Hakey, Fairfax, VT (US);

Steven John Holmes, Guilderland, NY (US);

David Vaclav Horak, Essex Junction, VT (US);

Charles William Koburger, Iii, Delmar, NY (US);

Peter H. Mitchell, Jericho, VT (US);

Inventors:

Toshiharu Furukawa, Essex Junction, VT (US);

Mark Charles Hakey, Fairfax, VT (US);

Steven John Holmes, Guilderland, NY (US);

David Vaclav Horak, Essex Junction, VT (US);

Charles William Koburger, III, Delmar, NY (US);

Peter H. Mitchell, Jericho, VT (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A conductive layer in an integrated circuit is formed as a sandwich having multiple sublayers, including at least two sublayers of oriented carbon nanotubes. A first sublayer is created by growing carbon nanotubes in a first direction parallel to the chip substrate from a catalyst in the presence of a reactant gas flow in the first direction, and a second sublayer is created by growing carbon nanotubes in a second direction parallel to the substrate and different from the first direction from a catalyst in the presence of a reactant gas flow in the second direction. The first and second directions are preferably substantially perpendicular. The conductive layer sandwich preferably contains one or more additional sublayers of a conductive material, such as a metal.


Find Patent Forward Citations

Loading…