The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2011
Filed:
Dec. 29, 2008
Yoshihisa Matsubara, Kanagawa, JP;
Takashi Sakoh, Kanagawa, JP;
Yoshihisa Matsubara, Kanagawa, JP;
Takashi Sakoh, Kanagawa, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
A semiconductor deviceincludes a first gate, which is formed using a gate last process. The first gateincludes a gate insulating film formed in a bottom surface in a first concave portion formed in the insulating film; a gate electrode formed over the gate insulating film in the first concave portion; and a protective insulating filmformed on the gate electrode in the first concave portion. In addition, the semiconductor deviceincludes a contact, which is coupled to the N-type impurity-diffused regionin the both sides of the first gateand is buried in the second concave portion having a diameter that is large than the first concave portion.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile